低温氩等离子体中的单探针和发射光谱诊断技术

使用静电探针和发射光谱分析方法，测量了实验室圆柱形辉光等离子体轴向I-V曲线和发射光谱.通过电子能量概率函数方法、Fermi-Dirac模型、低气压放电的Schottky扩散理论，分别计算了等离子体的电子温度、电子激发温度和电子密度.研究了利用等离子体发射光谱计算电子激发温度、低气压放电理论估算电子密度的方法与静电探针诊断方法的内在联系，讨论了不同方法的使用特点.所研究的方法在某些特殊环境的等离子体参数诊断中具有较好的参考和应用价值. 关键词： 静电探针 发射光谱 电子能量概率函数 Fermi-Dirac模型     

ZrCuSiAs型锰基化合物ThMnSbN中的化学压力效应

采用固相反应法合成了一种Zr Cu Si As型准二维层状锰基化合物Th Mn Sb N.基于X射线粉末衍射的结构精修显示,该化合物属于P4/nmm空间群.其晶胞参数为a=4.1731?, c=9.5160?.电输运测量显示,该化合物电阻率随温度下降缓慢上升,且在16 K附近出现电阻率异常.与此同时,该材料的磁化率在同一温度附近出现异常,显示出类似磁性相变的行为.进一步的比热测量中没有观察到磁相变导致的比热异常.另外,低温下的比热分析显示,该材料的电子比热系数为γ=19.7 m J·mol^–1·K^–2,远高于其他同类锰基化合物.该结果与电输运测量中观察到的低电阻率行为相符,暗示Th Mn Sb N中费米面附近存在可观的电子态密度.基于对一系列Zr Cu Si As型化合物晶体结构细节的比较,分析了含有萤石型Th₂N₂层的系列化合物中导电层所受化学压力的不同作用形式.     

Chapter 3 Extra-galactic gamma-ray sources

Extra-galactic gamma-ray sources,such as gamma-ray bursts,active galactic nuclei,starburst galaxies,are interesting and important targets for LHAASO observation...     

加性信号调制下指数形式关联噪声驱动的单模激光的光强关联时间

采用线性化近似,计算了加性信号调制下的由具有指数关联的两白噪声驱动的单模激光增益模型的光强关联时间.发现两噪声间关联程度对光强关联时间随噪声强度的变化曲线有很大的影响,两噪声间关联程度取不同值时,光强关联时间随噪声强度的变化曲线中将出现极大值(即出现共振) 或极小值(即出现抑制) .     

The Synthesis of 2‐(Chromon‐2/3‐yl)‐3‐(5‐thione‐4‐hydro‐1,3,4‐thiadiazol‐2‐yl)‐4‐oxo‐thiazolidine

2‐Formylchromones and 3‐formylchromones as the first materials singly reacted with 2‐amino‐5‐mercapto‐1,3,4‐thiadiazole to give the corresponding Schiff bases, which on cyclocondensation with mercapto‐acetic acid in 1,4‐dioxane yielded target compounds named 4‐oxo‐thiazolidines. The structures of all the synthetic compounds were confirmed by elemental analysis and IR, ¹H NMR, LC‐MS (ESI) spectral data.     

GaS multi-walled nanotubes from the lamellar precursor

Inorganic fullerene-like (IF) nanotubes constructed from layered metal chalcogenides are of particular significance because of their excellent physical properties and potential application in wide fields. But very few previous studies were focused on the IF nanotubes of layered III-VI semiconductor. Therefore we investigate the preparation, structure and photoluminescence (PL) properties of GaS nanotube (an important III-VI semiconductor IF nanotube). A simple method is introduced to prepare GaS multi-walled nanotubes for the first time by annealing the natural lamellar precursor in Ar. The reaction temperature is crucial for the formation of nanotube. A suitable temperature range is 500–850 °C. Bulk quantities of GaS nanotubes with diameters of 30–150 nm and lengths up to ten micrometers were produced. Some of these nanotubes show corrugated and interlinked structure and form many segments, demonstrating a bamboo-like structure. As compared to bulk materials, the obvious distinction of the products in PL spectra at liquid nitrogen temperature of 77 K was due to the structure variety. PACS 61.46.+w; 81.07.De; 81.16.Be     

Derivatives of multidimensional Bernstein operators and smoothness

We characterize the directional derivatives of multidimensional Bernstein operators by a new measure of smoothness. This task is carried out by means of establishing the relation between the asymptotic behavior of the derivatives and the smoothness of the functions they approximate. The obtained results generalize the corresponding ones for univariate Bernstein operators.     

Dynamical behaviors of Hopfield neural network with multilevel activation functions

When the activation function possesses multilevel property, the Hopfield neural network has some novel dynamical behaviors, and it is worthwhile to study. First, some properties about the activation function are obtained, on this foundation, some theoretical analysis about the quasi-equilibrium points has been made. From local and global view, some theorems about the boundedness are presented. Finally, two theorems about the first derivative of trajectory with respect to time are found, the first theorem indicates that the trajectory cannot keep increasing or decreasing for time t > t₀, the second theorem is about the complete stability of the trajectory.     

反应离子刻蚀ZnTe的THz辐射和探测研究

运用电光采样技术揭示了反应离子刻蚀（RIE）ZnTe晶体表面THz辐射的光学整流产生机制， 观察到0.25 ps的THz场分布.通过比较刻蚀前后以及不同刻蚀条件下ZnTe样品在不同激发功 率下的THz辐射强度，发现由于反应离子刻蚀破坏了ZnTe样品表面的有序性，晶体的电光系 数随射频功率的增加而减小.借助于计算不同刻蚀条件下ZnTe晶体的频率响应函数，分析了 随射频功率增加ZnTe晶体响应频谱展宽的现象. 关键词： THz辐射 反应离子刻蚀 ZnTe     

分子拓扑学方法估算多环芳香烃类化合物的电离能

在构建多环芳烃类化合物分子的邻接矩阵主对角元时,结合烷基极化效应指数考虑分子图顶点的性质,以分子碎片C、CH、CH2、CH3等的相对能量作主元,用分子拓扑学方法构建了多环芳香烃类化合物新的邻接矩阵.研究结果发现,新的邻接矩阵特征根与多环芳香烃类化合物的电离能有良好的相关性Ipi=4.756+2.870OMOi,R=0.9853,s=0.1765,n=446.用这种新方法估算多环芳香烃类化合物的电离能,所用参数少且为分子结构性参数,稳定可靠,计算简便,结果较满意.